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Infrared ellipsometry: a novel tool for characterization of group-III nitride heterostructures for optoelectronic device applications

Identifieur interne : 010F94 ( Main/Repository ); précédent : 010F93; suivant : 010F95

Infrared ellipsometry: a novel tool for characterization of group-III nitride heterostructures for optoelectronic device applications

Auteurs : RBID : Pascal:02-0168050

Descripteurs français

Pascal (Inist)
- Spectre IR, Dispositif optoélectronique, Ellipsométrie spectroscopique, Porteur libre, Diode électroluminescente, Dispositif électroluminescent, Epitaxie phase vapeur, Circuit électronique, Hétérostructure, Structure wurtzite, Aluminium nitrure, Gallium nitrure, Indium nitrure, Composé binaire, Composé ternaire, (Al,Ga,In)N, Al Ga In N, 7866F, 8560J.

English descriptors

KwdEn :
- Aluminium nitrides, Binary compounds, Electroluminescent devices, Electronic circuits, Free carrier, Gallium nitrides, Heterostructures, Indium nitrides, Infrared spectra, Light emitting diodes, Optoelectronic devices, Spectroscopic ellipsometry, Ternary compounds, VPE, Wurtzite structure.

Abstract

We demonstrate the application of spectroscopic infrared ellipsometry to determine nondestructively the free-carrier distribution in group-III nitride heterostructures, such as for optoelectronic and electronic device applications. Results are shown for a blue-light emitting diode structure based on wurtzite III-N materials grown on (0001) sapphire by metal-organic vapor phase epitaxy.

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Le document en format XML

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<term>Electroluminescent devices</term>
<term>Electronic circuits</term>
<term>Free carrier</term>
<term>Gallium nitrides</term>
<term>Heterostructures</term>
<term>Indium nitrides</term>
<term>Infrared spectra</term>
<term>Light emitting diodes</term>
<term>Optoelectronic devices</term>
<term>Spectroscopic ellipsometry</term>
<term>Ternary compounds</term>
<term>VPE</term>
<term>Wurtzite structure</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Spectre IR</term>
<term>Dispositif optoélectronique</term>
<term>Ellipsométrie spectroscopique</term>
<term>Porteur libre</term>
<term>Diode électroluminescente</term>
<term>Dispositif électroluminescent</term>
<term>Epitaxie phase vapeur</term>
<term>Circuit électronique</term>
<term>Hétérostructure</term>
<term>Structure wurtzite</term>
<term>Aluminium nitrure</term>
<term>Gallium nitrure</term>
<term>Indium nitrure</term>
<term>Composé binaire</term>
<term>Composé ternaire</term>
<term>(Al,Ga,In)N</term>
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<term>7866F</term>
<term>8560J</term>
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<front><div type="abstract" xml:lang="en">We demonstrate the application of spectroscopic infrared ellipsometry to determine nondestructively the free-carrier distribution in group-III nitride heterostructures, such as for optoelectronic and electronic device applications. Results are shown for a blue-light emitting diode structure based on wurtzite III-N materials grown on (0001) sapphire by metal-organic vapor phase epitaxy.</div>
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<fA09 i1="01" i2="1" l="ENG"><s1>Proceedings (Part B.2) of the Fourth International Conference on Nitride Semiconductors, ICNS-4, Denver, Colorado, USA, July 16-20, 2001</s1>
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<fC01 i1="01" l="ENG"><s0>We demonstrate the application of spectroscopic infrared ellipsometry to determine nondestructively the free-carrier distribution in group-III nitride heterostructures, such as for optoelectronic and electronic device applications. Results are shown for a blue-light emitting diode structure based on wurtzite III-N materials grown on (0001) sapphire by metal-organic vapor phase epitaxy.</s0>
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Infrared ellipsometry: a novel tool for characterization of group-III nitride heterostructures for optoelectronic device applications

Infrared ellipsometry: a novel tool for characterization of group-III nitride heterostructures for optoelectronic device applications

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Abstract

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